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Electrical characterization of Au/n-GaN Schottky diodes

โœ Scribed by B Akkal; Z Benamara; H Abid; A Talbi; B Gruzza


Book ID
113780666
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
86 KB
Volume
85
Category
Article
ISSN
0254-0584

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Structural and electrical properties of
โœ Reddy, V. Rajagopal ;Ramesh, C. K. ;Choi, Chel-Jong ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 286 KB

## Abstract The electrical and structural properties of molybdenum (Mo) Schottky contact to nโ€type GaN (4.07 ร— 10^18^ cm^โ€“3^) have been investigated before and after annealing at 600 ยฐC. Measurements show that the Schottky barrier height of the asโ€deposited sample was 0.81 eV (__I__โ€“__V__) and 1.02