We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag + ions on the wafer surface. Th
Electrical characteristics of Si-nanoparticle/Si-nanowire-based field-effect transistors
โ Scribed by Jeongmin Kang; Kihyun Keem; Dong-Young Jeong; Miyoung Park; Dongmok Whang; Sangsig Kim
- Publisher
- Springer
- Year
- 2008
- Tongue
- English
- Weight
- 326 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0022-2461
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