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Electrical characteristics of homoepitaxial p-GaSb analyzed by the p–n junction: A correction on the Hall parameter of heteroepitaxial p-GaSb/SI–GaAs

✍ Scribed by Jun Oh Kim; Sam Kyu Noh

Book ID: 116337646
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 611 KB
Volume: 12
Category: Article
ISSN: 1567-1739
DOI: 10.1016/j.cap.2012.06.001

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