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Impact of Ge implantation on the electrical characteristics of TiSi 2 p+/n shallow junctions with an a-Si (or a poly-Si) buffer layer

✍ Scribed by Cheng Tung Huang; Tan Fu Lei


Book ID
114536762
Publisher
IEEE
Year
1997
Tongue
English
Weight
388 KB
Volume
44
Category
Article
ISSN
0018-9383

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