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Electrical and structural properties of epitaxially grown Y1Ba2Cu3O7 − x and Y2Ba4Cu8O16 − x thin films using the BaF2 method

✍ Scribed by M. Moske; S. Dina; G.v. Minnigerode; K. Samwer


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
695 KB
Volume
170
Category
Article
ISSN
0921-4534

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A novel technique for measuring the temperature dependence of the penetration depth 2 (T) for HTSC films has been demonstrated using the resonance frequency of the LC circuit with a one-pancake spiral coil. The 2(T) dependence is in agreement with two-coil mutual inductance method data and with BCS