## Abstract The effects of rapid thermal annealing on the electrical and structural properties of Pd/Au Schottky contacts to n‐type InP(111) have been investigated by current–voltage (__I__ –__V__), capacitance–voltage (__C__ –__V__) and X‐ray diffraction (XRD) measurements. The barrier height of t
Electrical and structural properties of double metal structure Ni/V Schottky contacts onn-InP after rapid thermal process
✍ Scribed by S. Sankar Naik; V. Rajagopal Reddy; Chel-Jong Choi; Jong-Seong Bae
- Publisher
- Springer
- Year
- 2010
- Tongue
- English
- Weight
- 648 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0022-2461
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