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Electrical and structural properties of copper films annealed on Si(111)

✍ Scribed by M. Brüggemann; A. Masten; P. Wißmann

Book ID
108388356
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
229 KB
Volume
406
Category
Article
ISSN
0040-6090

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✍ R.Suárez Parra; P.J. George; A.E. Jiménez-Gonzalez; L. Baños; P.K. Nair 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 321 KB

Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In