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Electrical and photoelectrical characterization of diamond-on-silicon structures

✍ Scribed by S. Salvatori; R. Vincenzoni; M.C. Rossi; F. Galluzzi; F. Pinzari; G. Mattei; E. Cappelli; P. Ascarelli

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
317 KB
Volume
102
Category
Article
ISSN
0169-4332

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Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt