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Electrical and optical properties of β-FeSi2 after Co implantation and annealing

✍ Scribed by D. Panknin; F. Eichorn; E. Wieser; W. Skorupa; W. Henrion; J. Albrecht

Book ID
113285757
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
325 KB
Volume
84
Category
Article
ISSN
0168-583X

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The orthorhombic phase of iron silicide, P-F&i,, is a semiconducting material whose preparation is compatible with silicon processes. Epitaxy on Si has been achieved recently [I]. Its direct gap of 0.85 eV seems to make it suitable