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Electrical and optical properties of ZnO films sequentially implanted with P ions

✍ Scribed by Xue, Y H; Zhang, X D; Shen, Y Y; Zhang, D C; Zhu, F; Zhang, L H; Liu, C L

Book ID
120830407
Publisher
Institute of Physics
Year
2011
Tongue
English
Weight
482 KB
Volume
26
Category
Article
ISSN
0268-1242

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ZnO films were grown on Si(100) and quartz substrates by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD), using metal organic DEZ (diethlyzinc), and a gas mixture of Ar and O 2 . The process temperature ranged between room temperature and 400 Β°C. ZnO films showed both p-and n