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Electrical and optical properties of PbTe p-n junction infrared sensors

โœ Scribed by Barros, A. S.; Abramof, E.; Rappl, P. H. O.


Book ID
121715708
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
259 KB
Volume
99
Category
Article
ISSN
0021-8979

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The electrical properties of Schottky diodes and p-n junctions on GaSb ((100), doped with 2 x 10 t7 cm-~ tellurium) were examined. Capacitance-voltage measurements at 300 K show barrier heights of 0.65 eV (Al), 0.6 eV (Au, In, Pd), 0.5 eV (Ga) and 0.42 eV (Sb). The barrier heights tend to track the