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Electrical and optical properties of GaP grown on Si by MOVPE

✍ Scribed by L. Samuelson; P. Omling; H.G. Grimmeiss

Book ID
107789659
Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
445 KB
Volume
68
Category
Article
ISSN
0022-0248

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Optical properties and carrier dynamics
Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE
✍ Lutsenko, E. V. ;Pavlovskii, V. N. ;Danilchyk, A. V. ;Osipov, K. A. ;Rzheutskii, πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 173 KB

## Abstract Optical properties and carrier dynamics were investigated in a set of samples grown on Si utilizing different layer combinations between the topmost GaN layer and the Si substrate, including AlN/GaN distributed Bragg reflector (DBR) superlattices as well as AlGaN/GaN strain‐reducing lay