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Electrical and optical characterization of p-type ZNSe for diode laser structures

✍ Scribed by J. Simpson; S. Y. Wang; H. Stewart; J. Wallace; S. J. A. Adams; I. Hauksson; K. A. Prior; B. C. Cavenett

Book ID
112817857
Publisher
Springer US
Year
1993
Tongue
English
Weight
434 KB
Volume
22
Category
Article
ISSN
0361-5235

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ZnSe-based laser diodes and p-type dopin
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✍ K. Ohkawa; A. Tsujimura; S. Hayashi; S. Yoshii; T. Mitsuyu πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 466 KB

## Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N, metastables in the A3C: state. The free-hole concentration of N-doped ZnSe is of the order of 10" cm-j at room temperature. Laser diode ac