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Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms

✍ Scribed by Rumyantsev, S; Liu, G; Stillman, W; Shur, M; Balandin, A A

Book ID
120207294
Publisher
Institute of Physics
Year
2010
Tongue
English
Weight
430 KB
Volume
22
Category
Article
ISSN
0953-8984

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## Abstract In this paper the effects of different noise sources in a four‐gate field‐effect‐transistor have been studied and quantified in different operation regimes of the structure. To carry out this study, a model that captures the main features of generation–recombination noise, produced by t