Electrical activity of doped phosphorus atoms in (001) n-type diamond

✍ Scribed by Kato, Hiromitsu ;Takeuchi, Daisuke ;Tokuda, Norio ;Umezawa, Hitoshi ;Yamasaki, Satoshi ;Okushi, Hideyo

• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 445 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200879722

✦ Synopsis

Abstract

The electrical properties of (001) n‐type diamond were characterized by measuring the current voltage and capacitance voltage at different temperatures. Clear n‐type rectification characteristics were confirmed from Ti/n‐type diamond Schottky diodes. From the capacitance properties, the net donor density and Schottky barrier height were experimentally determined to be ∼5.4 × 10^17^ cm^–3^ and ∼4.5 eV, respectively. The electrical activity of doped phosphorus atoms in (001) n‐type diamond is discussed in comparison with (111). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)