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Electrical activity of dislocations in epitaxial ZnO- and GaN-layers analyzed by holography in a transmission electron microscope

✍ Scribed by E. Müller; D. Gerthsen; P. Brückner; F. Scholz; C. Kirchner; A. Waag

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 198 KB
Volume: 9
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2006.01.047

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