The present paper demonstrates the suitability of artificial neural network (ANN) for modelling of a FinFET in nano-circuit simulation. The FinFET used in this work is designed using careful engineering of source-drain extension, which simultaneously improves maximum frequency of oscillation f max b
β¦ LIBER β¦
Efficient clustering and simulated annealing approach for circuit partitioning
β Scribed by Singh Gill Sandeep; Chandel Rajeevan; Kumar Chandel Ashwani
- Book ID
- 107623924
- Publisher
- Chinese Electronic Periodical Services
- Year
- 2011
- Tongue
- English
- Weight
- 373 KB
- Volume
- 16
- Category
- Article
- ISSN
- 1007-1172
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