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Efficient algorithm for optimizing the allocation of computing power between departments

✍ Scribed by A. E. Kulinkovich; A. I. Nikitin; U. G. Nuriev


Publisher
Springer US
Year
1981
Tongue
English
Weight
411 KB
Volume
17
Category
Article
ISSN
1573-8337

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## Abstract A physical model for AlGaAs/GaAs heterojunction bipolar transistor with different emitter and base structures is proposed. The recombination currents in various depletion regions of the device are derived and are used to calculate the collector current in the range of 300–600 K. The the