An efficient algorithm for optimizing th
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Hyungkeun Ahn; M. El-Nokali; Deuk-Young Han
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Article
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2003
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John Wiley and Sons
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English
β 195 KB
## Abstract A physical model for AlGaAs/GaAs heterojunction bipolar transistor with different emitter and base structures is proposed. The recombination currents in various depletion regions of the device are derived and are used to calculate the collector current in the range of 300β600 K. The the