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An efficient algorithm for optimizing the electrical performance of HBTs

✍ Scribed by Hyungkeun Ahn; M. El-Nokali; Deuk-Young Han

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
195 KB
Volume
16
Category
Article
ISSN
0894-3370

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✦ Synopsis

Abstract

A physical model for AlGaAs/GaAs heterojunction bipolar transistor with different emitter and base structures is proposed. The recombination currents in various depletion regions of the device are derived and are used to calculate the collector current in the range of 300–600 K. The theoretical predictions of the model are compared with the numerical and experimental data available in the literature. The model is used to derive an efficient algorithm that optimizes the device structure for a given unity current gain frequency and collector current. Copyright Β© 2003 John Wiley & Sons, Ltd.

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