## Abstract Efficiency and efficiency retention in InGaN LEDs has recently received considerable attention. In this realm, we investigated internal quantum efficiency (IQE) and relative external quantum efficiency (EQE) of __c__βplane InGaN LEDs designed for emission at βΌ420βnm from the active regi
β¦ LIBER β¦
Efficiency improvement of light-emitting diodes with a developed electron blocking layer structure and its optimization
β Scribed by Wang, Tian-Hu; Xu, Jin-Liang; Wang, Xiao-Dong
- Book ID
- 118221066
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 712 KB
- Volume
- 47
- Category
- Article
- ISSN
- 1386-9477
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