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Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

✍ Scribed by C. H. Wang; D. W. Lin; C. Y. Lee; M. A. Tsai; G. L. Chen; H. T. Kuo; W. H. Hsu; H. C. Kuo; T. C. Lu; S. C. Wang; G. C. Chi

Book ID
124161546
Publisher
IEEE
Year
2011
Tongue
English
Weight
328 KB
Volume
32
Category
Article
ISSN
0741-3106

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## Abstract Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN‐based LEDs. Se