In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.% W-Ti target, using Ar ions, to a thickness of ~170 nm. After deposit
✦ LIBER ✦
Effects of γ-ray irradiation and thermal annealing on structural, optical and electrical properties of vacuum deposited vanadyl 2,3-naphthalocyanine thin films
✍ Scribed by Nisha S. Panicker; C. S. Menon
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 602 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0022-2461
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