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Effects of VIII ratio on electronic and optical properties of GaInAs layers grown by MOCVD

โœ Scribed by M. Kamada; H. Ishikawa

Book ID
103167129
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
582 KB
Volume
94
Category
Article
ISSN
0022-0248

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## Abstract For both, (Al,Ga)N with low Al content grown on a GaN nucleation layer and (Al,Ga)N with high Al content gown on an AlN nucleation layer, the inhomogeneous distribution of the luminescence is linked to the distribution of defects, which may be due to inversion domains. In the former sys