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Effects of transition metal (Ni, Mn, Cu) doping on ferroelectric properties of Bi0.9Nd0.1FeO3thin films prepared by chemical solution deposition method

✍ Scribed by Do, D.; Kim, J. W.; Song, T. K.; Kim, S. S.


Book ID
120055549
Publisher
Springer US
Year
2012
Tongue
English
Weight
624 KB
Volume
30
Category
Article
ISSN
1385-3449

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Fatigue-free Bi 3.2 Nd 0.8 Ti 3 O 12 ferroelectric thin films were successfully prepared on p-Si(1 1 1) substrate using chemical solution deposition process. The orientation and formation of thin film under different annealing schedules were studied. XRD analysis indicated that (2 0 0)-oriented film