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Effects of topological defects and local curvature on the electronic properties of planar graphene

✍ Scribed by Alberto Cortijo; María A.H. Vozmediano


Book ID
116796848
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
702 KB
Volume
763
Category
Article
ISSN
0550-3213

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## Abstract Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we r