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Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr,âTi)O[sub 3] (25â100 nm) thin films on LaNiO[sub 3] buffered Si

✍ Scribed by Lin, C. H.; Friddle, P. A.; Ma, C. H.; Daga, A.; Chen, Haydn

Book ID: 120047144
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 356 KB
Volume: 90
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1383262

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Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr,âTi)O[sub 3] (25â100 nm) thin films on LaNiO[sub 3] buffered Si

Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr,âTi)O[sub 3] (25â100 nm) thin films on LaNiO[sub 3] buffered Si