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Effects of Thermal Annealing on the Formation of Buriedβ-SiC by Ion Implantation

✍ Scribed by P. R. Poudel; B. Rout; D. R. Diercks; J. A. Paramo; Y. M. Strzhemechny; F. D. Mcdaniel

No coin nor oath required. For personal study only.

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