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Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE

✍ Scribed by K. Saito; Y. Inoue; Y. Hayashida; T. Tanaka; Q.X. Guo; M. Nishio

Book ID
116244392
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
495 KB
Volume
258
Category
Article
ISSN
0169-4332

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## Abstract InN thin films grown by MOVPE with a thickness of about 100 nm are investigated. Growth was carried out in either two or three steps: deposition of a low temperature nucleation layer at 400 Β°C and subse‐ quent growth of a thicker InN layer at 530 Β°C, or use of a GaN buffer layer which w