Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethylaminophosphorus

✍ Scribed by Kazuki Hayashida; Tooru Tanaka; Mitsuhiro Nishio; Qixin Guo; Tuyoshi Tanikawa; Hiroshi Ogawa

• Book ID: 104558004
• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 204 KB
• Volume: 3
• Category: Article
• ISSN: 1862-6351
• DOI: 10.1002/pssc.200564668

✦ Synopsis

Abstract

The effect of substrate temperature upon the photoluminescence (PL) properties of phosphorus‐doped ZnTe layers grown by atmospheric pressure metalorganic vapor phase epitaxy using tris‐dimethylaminophosphorus as a dopant source has been investigated together with the growth rate behaviour. At a substrate temperature of 400 °C corresponding to the growth condition close to the mass transport to surface kinetic transition region, the PL spectrum at 4 K is characterized by a strong I~a~ and a weak free‐to‐bound transition emission, implying a P‐doped ZnTe layer of good crystalline quality. For the layers grown at the substrate temperatures away from this temperature, on the other hand, a donor‐acceptor pair recombination emission appears in the spectra. The P‐doped layers exhibit only the edge emission at ∼549 nm in the room temperature PL specrum, independent of substrate temperature. The relationship between the electrical properties of P‐doped layers and the substrate temperature has also clarified. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)