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Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures

✍ Scribed by Goyal, Nitin; Fjeldly, Tor A.


Book ID
121399817
Publisher
American Institute of Physics
Year
2013
Tongue
English
Weight
763 KB
Volume
113
Category
Article
ISSN
0021-8979

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The behavior of two-dimensional electron gas density, induced by spontaneous and piezoelectric polarization, in non-intentionally doped GaN=AlxGa1-xN=GaN heterostructures with very thin barriers has been studied. The sheet carrier concentration, Ns, induced by polarization charges was determined sel