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Effects of strain-induced electric fields on the electronic structure of [111] growth axis semiconductor superlattices

✍ Scribed by Mailhiot, C.

Book ID
121842386
Publisher
AVS (American Vacuum Society)
Year
1986
Tongue
English
Weight
557 KB
Volume
4
Category
Article
ISSN
0734-211X

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We have used the recursion method to calculate bulk and surface electronic structures of a (GaP)l/(InP)l (111) strained-layer superlattice. The obtained energy gap for the stable superlattice is 1.88eV. which is smaller by 0.31eV than the average of the gaps of bulk GaP(2.9leV) and InP(1.48eV). We s