## Abstract We studied the nonthermal mechanism of quantum efficiency (QE) roll‐off in InGaN‐based multiple‐quantum‐well LEDs on sapphire and bulk GaN substrates with In content ranging from 1% to 28%. Both the efficiency evolution and peak energy shift appear to be strongly dependent on the In con
✦ LIBER ✦
Effects of spin-polarized injection and photo-ionization of MnZnO film on GaN-based light-emitting diodes
✍ Scribed by Chen, Lung-Chien; Tien, Ching-Ho; Mu, Chien-Sheng
- Book ID
- 115412716
- Publisher
- Optical Society of America
- Year
- 2010
- Tongue
- English
- Weight
- 258 KB
- Volume
- 18
- Category
- Article
- ISSN
- 1094-4087
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