Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study

✍ Scribed by Garino, Yiuri ;Teraji, Tokuyuki ;Koizumi, Satoshi ;Koide, Yasuo ;Ito, Toshimichi

• Book ID: 105365580
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 245 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200925448

✦ Synopsis

Abstract

We investigated the performance of the reverse characteristics of diamond Schottky diodes at high voltage. We observed that when the diode was in reverse bias voltage conditions, the negative current decayed with a stretched exponential behaviour, which can be ascribed to charging effects. During the discharging phase, where no bias was applied, we observed a positive current that shows again a decaying behaviour, but with a power law trend. These behaviours can be rationalized in terms of trapping/detrapping processes occurring at shallow level traps.