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Effects of rapid thermal annealing on the optical properties of InAs/(In)GaAs quantum dots with different areal density

โœ Scribed by Li, Zhan-Guo; You, Ming-hui; Liu, Guo-Jun; Gao, Xin; Li, Lin; Wang, Yong; Li, Lian-He

Book ID
121425574
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
463 KB
Volume
125
Category
Article
ISSN
0030-4026

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Tuning optical properties of high In content InGaAs/GaAs capped InAs quantum dots by post growth rapid thermal annealing
โœ B. Ilahi; L. Sfaxi; G. Bremond; H. Maaref ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 137 KB

The effect of rapid thermal annealing on InAs quantum dots (QDs) capped with In 0.4 Ga 0.6 As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of the PL emission peak has been observed for an annealing temperature (T a ) of 650 -C together with a pronounced improvemen