Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs

✍ Scribed by H. Tian; K.W. Kim; J.R. Hauser; N.A. Masnari; M.A. Littlejohn

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 705 KB
• Volume: 38
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(94)00160-h