Effects of passivation and postannealing on the photoluminescence properties of MgO/SiO2 core-shell nanorods
β Scribed by Changhyun Jin; Jungkeun Lee; Sunghoon Park; Chongmu Lee
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 663 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
MgO nanorods were grown by the thermal evaporation of Mg 3 N 2 powders on the Si (100) substrate coated with a gold thin film. The MgO nanorods grown on the Si (100) substrate were a few tens of nanometers in diameter and up to a few hundreds of micrometers in length. MgO/SiO 2 core-shell nanorods were also fabricated by the sputter-deposition of SiO 2 onto the MgO nanorods. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis results indicated that the cores and shells of the annealed coreshell nanorods were a face-centered cubic-type single crystal MgO and amorphous SiO 2 , respectively. The photoluminescence (PL) spectroscopy analysis results showed that SiO 2 coating slightly decreased the PL emission intensity of the MgO nanorods. The PL emission of the MgO/SiO 2 core-shell nanorods was, however, found to be considerably enhanced by thermal annealing and strongly depends on the annealing atmosphere. The PL emission of the MgO/SiO 2 core-shell nanorods was substantially enhanced in intensity by annealing in a reducing atmosphere, whereas it was slightly enhanced by annealing in an oxidative atmosphere. The origin of the PL enhancement by annealing in a reducing atmosphere is discussed with the aid of energy-dispersive X-ray spectroscopy analyses.
π SIMILAR VOLUMES
Silicon ions were implanted into SiO 2 thin films with various doses and energies. For the films implanted with various ion doses the photoluminescence (PL) intensity of 470 nm firstly increased with the increase of Si ion dose, which is similar to the variation trend of displacement per atom (DPA)