Effect of swift heavy ions on the photoluminescence properties of Si/SiO2 multilayers
โ Scribed by F Gourbilleau; C Ternon; X Portier; P Marie; M Levalois; R Rizk; C Dufour
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 481 KB
- Volume
- 16
- Category
- Article
- ISSN
- 1386-9477
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๐ SIMILAR VOLUMES
Silicon ions were implanted into SiO 2 thin films with various doses and energies. For the films implanted with various ion doses the photoluminescence (PL) intensity of 470 nm firstly increased with the increase of Si ion dose, which is similar to the variation trend of displacement per atom (DPA)
We report the effect of swift heavy ions (SHI) of 40 MeV Li 3+ ions on Tris-(8-hydraxyquinoline) aluminum (Alq 3 ) thin films deposited by thermal evaporation process on glass substrates. To understand the effect of the temperature-dependent optical properties, these thin films were irradiated both