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Effects of Oxynitride Buffer Layer on the Electrical Characteristics of Poly-Silicon TFTs Using Gate Dielectric

โœ Scribed by Tung-Ming Pan; Tin-Wei Wu


Book ID
114619390
Publisher
IEEE
Year
2008
Tongue
English
Weight
1009 KB
Volume
55
Category
Article
ISSN
0018-9383

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Effect of a silicon nitride buffer layer
โœ B.Y. Wang; Hao Wang; C. Ye; Y. Wang; Y. Ye; W.F. Wang ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 495 KB

Ta 2 O 5 films with a buffer layer of silicon nitride of various thicknesses were deposited on Si substrate by reactive sputtering and submitted to annealing at 700 ยฐC in nitrogen atmosphere. The microstructure and the electrical properties of thin films were studied. It was found that with a buffer