✦ LIBER ✦

Effects of oxygen partial pressure on the properties of reactively evaporated thin films of indium oxide

✍ Scribed by S. Naseem; I.A. Rauf; K. Hussain; N.A. Malik

Publisher: Elsevier Science
Year: 1988
Tongue: English
Weight: 389 KB
Volume: 156
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(88)90291-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of oxygen partial pressure on th

Effects of oxygen partial pressure on the properties of reactively evaporated thin films of indium oxide: S Naseem et al, Thin Solid Films, 156, 1988, 161–171

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 143 KB

Influence of the Oxygen Partial Pressure

Influence of the Oxygen Partial Pressure on the Opto-Electrical Properties of ZnO Thin Films Deposited by Reactive Evaporation

✍ G. Gordillo; J. Olarte; C. Calderón 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB 👁 3 views

Properties of indium oxide films prepare

Properties of indium oxide films prepared by the reactive evaporation of indium

✍ Daniel Laser 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 261 KB

Electrical properties of electron-beam-e

Electrical properties of electron-beam-evaporated indium oxide thin films

✍ A. Balasubramanian; M. Radhakrishnan; C. Balasubramanian 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 798 KB

The influence of oxygen partial pressure

The influence of oxygen partial pressure on the properties of DC reactive magnetron sputtered titanium oxide films

✍ Li-Jian Meng; M.P. dos Santos 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 590 KB

Effect of substrate temperature on the p

Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

✍ C. Viswanathan; V. Senthilkumar; R. Sriranjini; D. Mangalaraj; Sa. K. Narayandas 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 236 KB 👁 3 views

Thin films of InSe were obtained by thermal evaporation techniques on glass substrates maintained at various temperatures (T sb = 30°, 400°C). X-ray diffraction analysis showed the occurrence of amorphous to polycrystalline transformation in the films deposited at higher substrate temperature (400°C