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Effects of (NH[sub 4])[sub 2]S and NH[sub 4]OH surface treatments prior to SiO[sub 2] capping and thermal annealing on 1.3âÎ¼m GaInAsN/GaAs quantum well structures

✍ Scribed by PolojaÌrvi, V.; Salmi, J.; Schramm, A.; Tukiainen, A.; Guina, M.; Pakarinen, J.; Arola, E.; LaÌng, J.; VaÌyrynen, I. J.; Laukkanen, P.

Book ID: 120618815
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 631 KB
Volume: 97
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3487784

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Effects of (NH[sub 4])[sub 2]S and NH[sub 4]OH surface treatments prior to SiO[sub 2] capping and thermal annealing on 1.3âÎ¼m GaInAsN/GaAs quantum well structures

Effects of (NH[sub 4])[sub 2]S and NH[sub 4]OH surface treatments prior to SiO[sub 2] capping and thermal annealing on 1.3âÎ¼m GaInAsN/GaAs quantum well structures