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Effects of Ne+implantation and rapid thermal annealing on the microstructure and electrical properties of YBCO thin films

✍ Scribed by Y. H. Li; A. E. Staton-Bevan; T. J. Tate; M. J. Lee; Yupu Li; J. A. Kilner; R. E. Somekh


Publisher
Springer
Year
1996
Tongue
English
Weight
436 KB
Volume
15
Category
Article
ISSN
0261-8028

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Effects of thermal annealing on structur
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In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.% W-Ti target, using Ar ions, to a thickness of ~170 nm. After deposit