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Effects of low level boron doping of the i-layer on the performance of SiC p-i-n devices

✍ Scribed by A. Catalano; B.W. Faughnan; A.R. Moore

Book ID
104173113
Publisher
Elsevier Science
Year
1986
Weight
357 KB
Volume
13
Category
Article
ISSN
0165-1633

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Solar p-i-n junction cells were fabricated on indium-tin-oxide-coated glass and parameters and lifetime were tested for p layers made both of hydrogenated amorphous silicon and of admixtures of SiC. The hydrogenated amorphous silicon cells gave efficiencies of around 6% but the cells with admixtures