Effect of an SiC layer on p-i-n amorphous silicon solar cells
β Scribed by D. Haneman; R. Lujan
- Publisher
- Elsevier Science
- Year
- 1982
- Weight
- 273 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0379-6787
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β¦ Synopsis
Solar p-i-n junction cells were fabricated on indium-tin-oxide-coated glass and parameters and lifetime were tested for p layers made both of hydrogenated amorphous silicon and of admixtures of SiC. The hydrogenated amorphous silicon cells gave efficiencies of around 6% but the cells with admixtures of SiC showed around 5ΒΌ% efficiency, although they gave about 20% higher short-circuit current. The cell lifetime behavior was very similar, suggesting that the dominant factors, as yet unidentified, in determining lifetime were in the i layer.
π SIMILAR VOLUMES
Light-induced effects have been studied on hydrogenated amorphous silicon solar cells having an air mass 1 efficiency of 5% -7% and an area of 0.1 -0.2 cm 2. Within 72 h of illumination the open,circuit voltage did not decrease while the fill factor decreased from 0.6 to 0.4 and the short-circuit cu
The metal-semiconductor solar cell offers a simple structure to determine the photovoltaic behaviour of novel semiconductors, such as thin films of hydrogenated amorphous silicon (a-Si:H). It is known that solar cells made from this semiconductor must contain a wide built-in field region to collect