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Effects of lateral surface generation on the MOS-C linear-sweep and C-t transient characteristics

✍ Scribed by Pierret, R.F.; Small, D.W.

Book ID
114590448
Publisher
IEEE
Year
1973
Tongue
English
Weight
265 KB
Volume
20
Category
Article
ISSN
0018-9383

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The effects of b-ray irradiation on the electrical characteristics of Au/SiO 2 /n-Si (MOS) structures have been investigated using capacitance-voltage (C-V) and conductance-voltage (G/x-V) measurements. The MOS structures were irradiated with beta rays at doses up to 30 kGy. The C-V and G/x-V charac