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Effects of lateral confinement on the growth of CoSi and CoSi2 on (0 0 1)Si inside 0.2–2 μm oxide openings prepared by electron beam lithography

✍ Scribed by J.Y Yew; L.J Chen; W.F Wu

No coin nor oath required. For personal study only.

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Effects of lateral confinement on the growth of CoSi and CoSi2 on (0&#xa0;0&#xa0;1)Si inside 0.2–2&#xa0;μm oxide openings prepared by electron beam lithography