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Effects of laser irradiation on optical properties of amorphous and annealed Ga15Se81In4 and Ga15Se79In6 chalcogenide thin films

โœ Scribed by A.A. Al-Ghamdi; Shamshad A. Khan; S. Al-Heniti; F.A. Al-Agel; T. Al-Harbi; M. Zulfequar


Book ID
116607027
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
351 KB
Volume
505
Category
Article
ISSN
0925-8388

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The results are presented of a study of the electrical and optical properties of vacuum evaporated amorphous thin films in the Ge0S0Se system. The effect of Te isoelectronic substitution either completely for S to give Ge 2.5 Te 2.5 Se 95 and Ge 5 Te 5 Se 90 or partially for Se to yield Ge 2.