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Effects of ionization rates on silicon IMPATT devices

✍ Scribed by Lee, C.M.; Seddik, M.M.; Haddad, G.I.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of ionization rates on IMPATT de

✍ Seddik, M.M.; Haddad, G.I. 📂 Article 📅 1973 🏛 IEEE 🌐 English ⚖ 385 KB

Effect of unequal ionization rates on Ga

✍ Laton, R.W.; Sudbury, R.W. 📂 Article 📅 1974 🏛 IEEE 🌐 English ⚖ 205 KB

Photocurrent effects on noise in silicon

✍ Pitner, P.M.; Gutmann, R.J.; Borrego, J.M. 📂 Article 📅 1982 🏛 The Institution of Electrical Engineers ⚖ 491 KB

Particle simulation of impact ionization

✍ Didier Lippens; Jean-Luc Nieruchalski; Eugène Constant 📂 Article 📅 1985 🏛 Elsevier Science ⚖ 304 KB

Impact ionization in submicron silicon d

✍ Massey, D. J. 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 234 KB

Effect of Temperature on Device Admittan

✍ Takayama, Y. 📂 Article 📅 1975 🏛 IEEE 🌐 English ⚖ 690 KB