✦ LIBER ✦

Effect of Temperature on Device Admittance of GaAs and Si IMPATT Diodes

✍ Scribed by Takayama, Y.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of unequal ionization rates on Ga

✍ Laton, R.W.; Sudbury, R.W. 📂 Article 📅 1974 🏛 IEEE 🌐 English ⚖ 205 KB

Effects of ionization rates on IMPATT de

✍ Seddik, M.M.; Haddad, G.I. 📂 Article 📅 1973 🏛 IEEE 🌐 English ⚖ 385 KB

Comparative studies of Si, GaAs, and InP

✍ Lippens, D. ;Nieruchalski, J. L. ;Dalle, C. ;Rolland, P. A. 📂 Article 📅 1986 🏛 Springer 🌐 English ⚖ 550 KB

Efficiencies of Schottky-barrier GaAs an

✍ Tantraporn, W.; Se Puan Yu 📂 Article 📅 1973 🏛 IEEE 🌐 English ⚖ 467 KB

Effect of junction inhomogeneity on AC V

✍ Sharma, Vijender ;Mathur, P. C. 📂 Article 📅 1977 🏛 John Wiley and Sons 🌐 English ⚖ 155 KB

The effect of package parasitics on a se

✍ Chen, W.T.; Kim, C.K. 📂 Article 📅 1974 🏛 IEEE 🌐 English ⚖ 450 KB