Effects of ion implantation on the mechanical behavior of GaN films
โ Scribed by P. Kavouras; Ph. Komninou; Th. Karakostas
- Book ID
- 108289471
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 680 KB
- Volume
- 515
- Category
- Article
- ISSN
- 0040-6090
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๐ SIMILAR VOLUMES
A Raman spectroscopic study has been carried out on the effects of ion implantation of argon or nitrogen on the structures of ion-plated (IP) carbon films. The carbon films were deposited on WC substrates at room temperature, 200, 250, 300 and 350 ยฐC. Implantation of 150 keV Ar + or N into the films
The influence of C, N, O, Mg, Si and co-implants (Mg+Si) ions implantation with fluences in the wide range 10 13 -10 17 cm ร2 on the yellow luminescence (YL) properties of wurtzite GaN has been studied by photoluminescence (PL) spectroscopy. Two types of n-type GaN samples grown by metal-organic che