๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Effects of ion implantation on the mechanical behavior of GaN films

โœ Scribed by P. Kavouras; Ph. Komninou; Th. Karakostas


Book ID
108289471
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
680 KB
Volume
515
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Effects of MeV ion implantation on metal
โœ M. Ikeyama; K. Saitoh; S. Nakao; H. Niwa; S. Tanemura; Y. Miyagawa; S. Miyagawa ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 524 KB
Effects of ion implantation on structure
โœ H. Watanabe; M. Iwaki ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 492 KB

A Raman spectroscopic study has been carried out on the effects of ion implantation of argon or nitrogen on the structures of ion-plated (IP) carbon films. The carbon films were deposited on WC substrates at room temperature, 200, 250, 300 and 350 ยฐC. Implantation of 150 keV Ar + or N into the films

Effects of different ions implantation o
โœ W. You; X.D. Zhang; L.M. Zhang; Z. Yang; H. Bian; Q. Ge; W.X. Guo; W.X. Wang; Z. ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 188 KB

The influence of C, N, O, Mg, Si and co-implants (Mg+Si) ions implantation with fluences in the wide range 10 13 -10 17 cm ร€2 on the yellow luminescence (YL) properties of wurtzite GaN has been studied by photoluminescence (PL) spectroscopy. Two types of n-type GaN samples grown by metal-organic che