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Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

โœ Scribed by Jiang, Zhengping; Kharche, Neerav; Boykin, Timothy; Klimeck, Gerhard


Book ID
120807673
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
993 KB
Volume
100
Category
Article
ISSN
0003-6951

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Studies of the luminescence spectra of Si 1ร€x Ge x /Si quantum wells with a low Ge content have been carried out in a wide pumping power range. It was shown that a Si 1ร€x Ge x /Si quantum well spectrum variation observed at low temperatures and high pumping powers is caused by cooperative effects-fo